Coupling of THz radiation with intervalence band transitions in microcavities.

نویسندگان

  • M F Pereira
  • I A Faragai
چکیده

The strong coupling of THz radiation and material excitations can improve the quantum efficiency of THz emitters. In this paper, we investigate THz polaritons and antipolaritons based on valence band transitions, which allow TE coupling in a simple configuration. The approach can improve the quantum efficiency of THz based devices based on TE mode in the strong coupling regime of THz radiations and intervalence bands transitions in a GaAs/AlGaAs quantum wells. A Nonequilibrium Many Body Approach for the optical response beyond the Hartree-Fock approximation is used as input to the effective dielectric function formalism for the polariton/antipolariton problem. The energy dispersion relations in the THz range are obtained by adjusting the full numerical solutions to simple analytical expressions, which can be used for non specialists in a wide number of new structures and material systems. The combination of manybody and nonparabolicity at high densities leads to dramatic changes in the polariton spectra in a nonequilibrium configuration, which is only possible for intervalence band transitions.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Intervalence Band Stark Effect of the Special Pair Radical Cation in Bacterial Photosynthetic Reaction Centers

The Stark spectrum of the intervalence band of the special pair radical cation in bacterial photosynthetic reaction centers is presented. This spectrum, centered at 2600 cm-1, is modeled using a general treatment of intervalence band Stark effects based on a two-state vibronic coupling model of mixed-valency. The observed line shape can be predicted using values for the electronic coupling, dri...

متن کامل

Development of novel waveguides in the terahertz (THz) region

Terahertz (THz) radiation, often referred to the frequency range from 0.1 to 10 THz, is the focus of an active and fast growing research community. However, this frequency range located in the electromagnetic spectrum between the microwave band and infrared band, was known as the “THz-gap” until the late 1980's. A lack of available coherent sources and detectors rendered this frequency range in...

متن کامل

Terahertz Sideband Generation and Coherent Control in Semiconductor Microcavities

The controlled variation of the temperature, magnetic field, electrical bias, and quantum-well (QW) thickness [1] have all been employed to afford tunability of the exciton–cavity-photon coupling in semiconductor microcavities (MC’s). Time-dependent knobs, however, have attracted scant attention. As we show in this Letter, the modulation of the optical properties of a MC at THz frequencies may ...

متن کامل

Intervalence-band THz laser in selectively-doped semiconductor structure

Monte Carlo simulation of carrier dynamics and far-infrared absorption in a selectively-doped p-type multilayer Ge structure with vertical transport was performed to test a novel terahertz laser concept. The design exploits the known mechanism of THz amplification on intersubband transitions in p-Ge, but with spatial separation of light hole accumulation regions from doped regions, which allows...

متن کامل

Temperature Effect on THz Quantum Cascade Lasers

A simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of Resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. We found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency THz QCLs.In low frequenc...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Optics express

دوره 22 3  شماره 

صفحات  -

تاریخ انتشار 2014